Thermal Infrared Radiation Thermometry in MBE

Ircon’s Application note AN110 of the same title as this story

Santa Cruz CA, USA — The use of Thermal Infrared Radiation Thermometry (Infrared or IR Thermometry) for substrate temperature measurement during molecular beam epitaxy (MBE), a semiconductor manufacturing process, is discussed in this free applications note on the Ircon website.

The fundamental relationships of radiation heat transfer is treated in respect to the optical properties of semiconductor grade silicon (Si) and gallium arsenide (GaAs) wafers. Continue reading →

Share This Post